The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Sep. 23, 2013
Infineon Technologies Austria Ag, Villach, AT;
Hans Weber, Bayerisch Gmain, DE;
Franz Hirler, Isen, DE;
Armin Willmeroth, Augsburg, DE;
Stefan Gamerith, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material in Ohmic contact with a drain metallization and the n-type pillar regions and having a doping charge per area higher than a breakdown charge per area of the semiconductor material. A punch-through area of the semiconductor body includes a p-type semiconductor region in Ohmic contact with a source metallization, a floating p-type body region and an n-type second field-stop region. The floating p-type body region extends into the active area. The second field-stop region is in Ohmic contact with the first field-stop region, forms a pn-junction with the floating p-type body region, is arranged between the p-type semiconductor region and floating p-type body region, and has a doping charge per area lower than the breakdown charge per area of the semiconductor material.