The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Apr. 30, 2013
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon, KR;
Inventors:
Kee Ju Um, Suwon, KR;
Dong Soo Seo, Suwon, KR;
Chang Su Jang, Suwon, KR;
In Hyuk Song, Suwon, KR;
Jaehoon Park, Suwon, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/404 (2013.01); H01L 29/66333 (2013.01);
Abstract
There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.