The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

May. 13, 2013
Applicant:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Inventors:

Hyun Jae Na, Dobong-gu, KR;

Yoon Ho Khang, Yongin-si, KR;

Sang Ho Park, Suwon-si, KR;

Dong Hwan Shim, Yongin-si, KR;

Se Hwan Yu, Dongjak-gu, KR;

Yong Su Lee, Gyeonggi-do, KR;

Myoung Geun Cha, Seodaemun-gu, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/20 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 29/78603 (2013.01); H01L 29/78633 (2013.01);
Abstract

A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.


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