The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

May. 03, 2013
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Johannes Theodorus Marinus Donkers, Valkenswaard, NL;

Stephan Heil, Eindhoven, NL;

Romain Delhougne, Boortmeerbeek, BE;

Hans Broekman, Nijmegen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/28575 (2013.01); H01L 29/452 (2013.01); H01L 29/66431 (2013.01);
Abstract

Disclosed is a semiconductor device comprising a substrate (); at least one semiconducting layer () comprising a nitride of a group 13 element on said substrate; and an ohmic contact () on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion () on the at least one semiconducting layer and a metal portion () adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.


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