The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Sep. 22, 2011
Applicant:

Jeffrey H. Saunders, Andover, MA (US);

Inventor:

Jeffrey H. Saunders, Andover, MA (US);

Assignee:

RAYTHEON COMPANY, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/042 (2014.01); H01L 27/142 (2014.01);
U.S. Cl.
CPC ...
H01L 27/142 (2013.01); Y02E 10/50 (2013.01);
Abstract

A single monolithic integrated circuit () containing a solar cell (or cells) with a DC-DC converter includes: a substrate (); the solar cell () or a solar cell array (') on the substrate for generating an output voltage; and the DC-DC converter () integrated on the substrate for receiving the output voltage to generate a converted voltage, which may be higher or lower than the solar generated voltage. The substrate may be a silicon <111>, silicon carbide, or sapphire substrate. A GaN RF power amplifier and a CMOS controller including PWM modulator may also be monolithically integrated with an InGaN solar cell array and a GaN DC-DC converter. GaN switches () may be used to couple InGaN solar cells () in series or parallel within the solar cell array (′) to yield improved or optimal voltage and current levels as required by the load.


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