The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Dec. 22, 2014
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Hitoshi Saito, Hachioji, JP;
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Abstract
An embodiment of a compound semiconductor device includes: a first lower electrode; a first insulating film over the first lower electrode; a first upper electrode over the first insulating film; a second lower electrode separate from the first lower electrode; a second insulating film over the second lower electrode; a third insulating film over the second insulating film; and a second upper electrode over on the third insulating film. A thickness of the first insulating film is substantially the same as a thickness of the third insulating film, a contour of the third insulating film in planar view is outside a contour of the second insulating film in planar view, and a contour of the second upper electrode in planar view is inside the contour of the second insulating film in planar view.