The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Sep. 03, 2013
Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Jin-Chern Chiou, Hsinchu, TW;

Chih-Wei Chang, Taoyuan County, TW;

Tzu Sen Yang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/522 (2006.01); H01L 27/01 (2006.01); H01L 23/48 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 27/016 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 23/5228 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention provides a semiconductor device integrating passive elements, which applies to analog circuits, wherein capacitors, resistors and inductors are fabricated by a TVS technology. The semiconductor device comprises a substrate; at least one passive element arranged in the substrate; and at least one semiconductor integrated circuit formed in the substrate. The passive element includes a first conductive layer, a first dielectric layer and a second conductive layer, which are stacked sequentially. The first conductive layer and the second conductive layer cooperate with the first dielectric layer to form an equivalent element. The semiconductor circuit is electrically connected with the passive element through the first conductive layer and the second conductive layer to form bidirectional signal transmission paths. The passive elements can be formed on the back side of the substrate to reduce the area occupied by the passive elements in the substrate.


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