The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Mar. 12, 2013
Applicant:

Sumitomo Bakelite Co., Ltd., Tokyo, JP;

Inventor:

Shingo Itoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49503 (2013.01); H01L 23/3171 (2013.01); H01L 23/4952 (2013.01); H01L 24/45 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48839 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48847 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/48869 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01047 (2013.01);
Abstract

There is provided a semiconductor device having excellent moisture resistance and high temperature storage properties. The semiconductor device includes a lead frame that has a die pad and an inner lead, as a substrate, a semiconductor element that is mounted on the die pad, an electrode pad that is provided in the semiconductor element, a copper wire that connects the inner lead provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. A region of the electrode pad disposed within a range of at least equal to or less than 3 μm from a junction surface with the copper wire in a depth direction includes a metal, which is less likely to be ionized than aluminum, as a main component, and a content of sulfur in the copper wire is equal to or more than 15 ppm and equal to or less than 100 ppm with respect to a total amount of the copper wire.


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