The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Sep. 04, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Norihisa Arai, Saitama-ken, JP;

Tsutomu Takahashi, Kanagawa-ken, JP;

Kazuo Hatakeyama, Tokyo, JP;

Kazuki Uchino, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes: a semiconductor layer of a first conductivity type, the semiconductor layer having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive layers extending in a direction from the first surface side toward the second surface side of the semiconductor layer; a first semiconductor region of a second conductivity type surrounding part of each of the plurality of conductive layers on the second surface side of the semiconductor layer, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor layer; and an insulating film provided between each of the plurality of conductive layers and the semiconductor layer and between each of the plurality of conductive layers and the first semiconductor region.


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