The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Apr. 10, 2014
The United States of America, As Represented BY the Secretary of the Air Force, Washington, DC (US);
Burhan Bayraktaroglu, Yellow Springs, OH (US);
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
A method is provided for fabricating an ultra short gate length thin film transistor. A plurality of layers is deposited on a substrate including a refractory metal and a first and second photosensitive material. The second material is sensitive to longer wavelength optical radiation than the first material and the first material is not soluble in chemicals used to develop or strip the second material. A source contact pattern is defined in the second material to mask the first photosensitive material. The first material is processed to produce an undercut of the first material with respect to the second material. A metal layer is deposited at a normal incidence on the second material and an exposed portion of the refractory metal. The second material is removed. Exposed portions of the refractory metal corresponding to the undercut of the first material are removed to form a gap in the refractory metal.