The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Feb. 18, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Edgar R. Cordero, Round Rock, TX (US);

Timothy J. Dell, Colchester, VT (US);

Girisankar Paulraj, Chennai, IN;

Saravanan Sethuraman, Bangalore, IN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/08 (2006.01); G06F 11/20 (2006.01); G11C 29/42 (2006.01); G11C 29/52 (2006.01); G11C 5/04 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/08 (2013.01); G06F 11/2094 (2013.01); G11C 29/42 (2013.01); G11C 29/52 (2013.01); G11C 5/04 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A method and apparatus for operation of a memory module for storage of a data word is provided. The apparatus includes a memory module having a set of paired memory devices including a first memory device to store a first section of a data word and a second memory device to store a second section of the data word when used in failure free operation. The apparatus may further include a first logic module to perform a write operation by writing the first and second sections of the data word to both the first memory device and the second memory device upon the determination of certain types of failure. The determination may include that a failure exists in the word section storage of either the first or second memory devices but that no failures exist in equivalent locations of word section storage in the two memory devices.


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