The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Oct. 31, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyun-Jun Yoon, Seongnam-si, KR;

Jae-Yong Jeong, Yongin-si, KR;

Myoung-Hoon Choi, Suwon-si, KR;

Bo-Geun Kim, Suwon-si, KR;

Ki-Tae Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1048 (2013.01); G11C 11/5642 (2013.01); G11C 16/3422 (2013.01); G11C 2029/0411 (2013.01); G11C 2211/5641 (2013.01);
Abstract

A memory device useable with a memory system includes a voltage generator to a plurality of first candidate voltages and a plurality of second candidate voltages, and an X decoder to sequentially apply each of the plurality of first candidate voltages and each of the plurality of second candidate voltages to one or more cells of a memory cell array, and then to apply one of the plurality of first candidate voltages and one of the plurality of second candidate voltages as a first read voltage and a second voltage, respectively, to read data from the cells of the memory cell array according to a characteristic of the cells of the memory cell array.


Find Patent Forward Citations

Loading…