The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
May. 25, 2012
Je-hun Lee, Seoul, KR;
Byung-du Ahn, Hwaseong-si, KR;
Sei-yong Park, Suwon-si, KR;
Jun-hyun Park, Suwon-si, KR;
Jae-woo Park, Seongnam-si, KR;
Dae-hwan Kim, Seongnam-si, KR;
Sung-chul Kim, Gyeongsangnam-do, KR;
Yong-woo Jeon, Seoul, KR;
Je-Hun Lee, Seoul, KR;
Byung-Du Ahn, Hwaseong-si, KR;
Sei-Yong Park, Suwon-si, KR;
Jun-Hyun Park, Suwon-si, KR;
Jae-Woo Park, Seongnam-si, KR;
Dae-Hwan Kim, Seongnam-si, KR;
Sung-Chul Kim, Gyeongsangnam-do, KR;
Yong-Woo Jeon, Seoul, KR;
SAMSUNG DISPLAY CO., LTD., , KR;
Abstract
A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gusing a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gand values of an interface state-density-function Dover the entire energy band in the band gap.