The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Aug. 09, 2012
Applicants:

Daniel W. Youngner, Maple Grove, MN (US);

Jeff A. Ridley, Shorewood, MN (US);

Son T. LU, Plymouth, MN (US);

Inventors:

Daniel W. Youngner, Maple Grove, MN (US);

Jeff A. Ridley, Shorewood, MN (US);

Son T. Lu, Plymouth, MN (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); G04F 5/14 (2006.01);
U.S. Cl.
CPC ...
G04F 5/14 (2013.01); Y10T 428/24149 (2015.01);
Abstract

A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.


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