The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Nov. 29, 2011
Applicants:

Asli Sirman, Boston, MA (US);

Ahmed Busnaina, Needham, MA (US);

Cihan Yilmaz, Boston, MA (US);

Jun Huang, Malden, MA (US);

Sivasubramanian Somu, Natick, MA (US);

Inventors:

Asli Sirman, Boston, MA (US);

Ahmed Busnaina, Needham, MA (US);

Cihan Yilmaz, Boston, MA (US);

Jun Huang, Malden, MA (US);

Sivasubramanian Somu, Natick, MA (US);

Assignee:

Northeastern University, Boston, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 13/12 (2006.01); H05K 1/02 (2006.01); B82Y 40/00 (2011.01); C25D 13/04 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
C25D 13/12 (2013.01); B82Y 40/00 (2013.01); C25D 13/04 (2013.01); H05K 1/0213 (2013.01); H01L 21/0243 (2013.01); H01L 21/0259 (2013.01); H01L 21/02628 (2013.01); H01L 29/0665 (2013.01);
Abstract

A method for high rate assembly of nanoelements into two-dimensional void patterns on a non-conductive substrate surface utilizes an applied electric field to stabilize against forces resulting from pulling the substrate through the surface of a nanoelement suspension. The electric field contours emanating from a conductive layer in the substrate, covered by an insulating layer, are modified by a patterned photoresist layer, resulting in an increased driving force for nanoelements to migrate from a liquid suspension to voids on a patterned substrate having a non-conductive surface. The method can be used for the production of microscale and nanoscale circuits, sensors, and other electronic devices.


Find Patent Forward Citations

Loading…