The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Apr. 04, 2012
Young-seok Choi, Daejeon, KR;
Dae-youn Kim, Daejeon, KR;
Seung Woo Choi, Cheonan, KR;
Yong Min Yoo, Seoul, KR;
Jung Soo Kim, Cheonan, KR;
Young-Seok Choi, Daejeon, KR;
Dae-Youn Kim, Daejeon, KR;
Seung Woo Choi, Cheonan, KR;
Yong Min Yoo, Seoul, KR;
Jung Soo Kim, Cheonan, KR;
ASM GENITECH KOREA LTD., Cheonan-Si, KR;
Abstract
A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.