The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Oct. 12, 2012
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventor:

Masayuki Asai, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); H01L 21/02334 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of times, the cycle including a first process of supplying a first gas for etching the deposit into the process chamber and a second process of supplying a second gas into the process chamber so as to increase a pressure in the process chamber, the second gas being incapable of etching a member constituting the process chamber or having an etchability against the member lower than that of the first gas.


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