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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9145339 B1

PDFFull Text
Expired
Date of Patent:
Sep. 29, 2015

Filed:

Sep. 03, 2009

Material having a multilayer architecture and intended for being contacted with liquid silicon

Applicants:

Jean-paul Garandet, Grenoble, FR;

Denis Camel, Chambery, FR;

Béatrice Drevet, Grenoble, FR;

Nicolas Eustathopoulos, Grenoble, FR;

Rana Israel, Grenoble, FR;

Inventors:

Jean-Paul Garandet, Grenoble, FR;

Denis Camel, Chambery, FR;

Béatrice Drevet, Grenoble, FR;

Nicolas Eustathopoulos, Grenoble, FR;

Rana Israel, Grenoble, FR;

Assignees:

Commissariat a l'Energie Atomique et Energies Alternatives, Paris, FR;

Center National de la Recherche Scientifique, Paris, FR;

Attorney:

Scully, Scott, Murphy & Presser

Primary Examiner:

Donald J Loney

Int. Cl.
CPC ...
B32B 3/26 (2006.01); C04B 35/573 (2006.01); C04B 35/80 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01); C04B 41/87 (2006.01); C30B 11/00 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C04B 35/573 (2013.01); C04B 35/806 (2013.01); C04B 41/009 (2013.01); C04B 41/5059 (2013.01); C04B 41/87 (2013.01); C30B 11/002 (2013.01); C30B 29/06 (2013.01); C30B 35/002 (2013.01); C04B 2235/422 (2013.01); C04B 2235/425 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/656 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/662 (2013.01); C04B 2235/728 (2013.01); C04B 2235/77 (2013.01); C04B 2235/95 (2013.01); Y10T 428/24521 (2015.01); Y10T 428/24996 (2015.04); Y10T 428/249967 (2015.04); Y10T 428/249969 (2015.04); Y10T 428/249974 (2015.04);
Abstract

The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials.

Find Patent Forward Citations

Garandet, Jean-Paul. (2015). Material having a multilayer architecture and intended for being contacted with liquid silicon (U.S. Patent No. 9145339). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9145339

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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