The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Nov. 29, 2012
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Carlos Castro, Unterhaching, DE;

Michael Mankel, Biedenkopf, DE;

Mark N. Muenzer, Neubiberg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/5387 (2007.01); H02P 27/06 (2006.01); H02M 7/5388 (2007.01); H02P 27/08 (2006.01); H03K 17/10 (2006.01); H02M 1/00 (2007.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H02P 27/06 (2013.01); H02M 7/5388 (2013.01); H02P 27/08 (2013.01); H03K 17/102 (2013.01); B60L 2210/40 (2013.01); H02M 2001/0054 (2013.01); H02P 2207/01 (2013.01); H03K 2017/6875 (2013.01); Y02B 70/1483 (2013.01); Y02B 70/1491 (2013.01); Y02T 10/642 (2013.01); Y02T 10/7241 (2013.01);
Abstract

A power inverter includes a reference line operably provided with a reference potential and a supply line operably provided with a DC supply voltage with respect to the reference potential. A first half bridge includes a high-side switch and a low-side switch. The high-side switch is coupled between the supply line and a middle tap of the half bridge and the low-side switch is coupled between the middle tap and the reference line. The low-side switch is formed by a normally-on silicon carbide junction field effect transistor and the high-side switch is formed by a series circuit of a normally-on silicon carbide junction field effect transistor and a normally-off metal oxide field effect transistor.


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