The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Dec. 14, 2012
Applicants:

Hidehiko Yabuhara, Kanagawa-ken, JP;

Takashi Hirotani, Kanagawa-ken, JP;

Junji Kataoka, Kanagawa-ken, JP;

Hisashi Kameoka, Mie-ken, JP;

Inventors:

Hidehiko Yabuhara, Kanagawa-ken, JP;

Takashi Hirotani, Kanagawa-ken, JP;

Junji Kataoka, Kanagawa-ken, JP;

Hisashi Kameoka, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); H01L 45/148 (2013.01); H01L 45/1675 (2013.01);
Abstract

According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element.


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