The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Jan. 18, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Takeki Ninomiya, Osaka, JP;

Takeshi Takagi, Kyoto, JP;

Koji Katayama, Nara, JP;

Yoshio Kawashima, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01);
Abstract

A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first variable resistance layer. When viewed in a direction perpendicular to the major surface of the second variable resistance layer, an outline of the second variable resistance layer is located inwardly of the outline of any one of the second electrode layer and the first variable resistance layer, and an outline of a face of the second variable resistance layer, the face being in contact with the first variable resistance layer is located inwardly of an outline of a face of the first variable resistance layer, the face being in contact with the second variable resistance layer.


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