The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Mar. 05, 2014
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Masao Kamiya, Kiyosu, JP;

Masashi Deguchi, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer located on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, and a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.


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