The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Jul. 29, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Susumu Obata, Nonoichi, JP;

Takayoshi Fujii, Yokohama, JP;

Kazuhito Higuchi, Yokohama, JP;

Akihiro Kojima, Nonoichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 33/40 (2010.01); H01L 33/50 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/385 (2013.01); H01L 33/42 (2013.01); H01L 33/502 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes. The stacked body includes a light emitting layer. The first and second electrodes are provided on the stacked body. The device further includes an insulating layer covering the stacked body, a first conversion electrode electrically connected to the first electrode, a second conversion electrode electrically connected to the second electrode (), and a light blocking body covering a side surface of the stacked body. The first conversion electrode, the second conversion electrode, and the light blocking body include, in a portion contacting with the insulating layer, a member with a reflectance of 80 percent or more for light emitted from the light emitting layer.


Find Patent Forward Citations

Loading…