logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9142723 B1

PDFFull Text
Date of Patent:
Sep. 22, 2015

Filed:

Oct. 12, 2011

Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein

Applicants:

Colin Humphreys, Cambridge, GB;

Clifford Mcaleese, Cambridge, GB;

Menno Kappers, Cambridge, GB;

Zhenyu Liu, Cambridge, GB;

Dandan Zhu, Cambridge, GB;

Inventors:

Colin Humphreys, Cambridge, GB;

Clifford McAleese, Cambridge, GB;

Menno Kappers, Cambridge, GB;

Zhenyu Liu, Cambridge, GB;

Dandan Zhu, Cambridge, GB;

Assignee:

Intellec Limited, Cambridge, GB;

Attorney:

Senniger Powers LLP

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); B82Y 20/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02573 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/075 (2013.01); H01L 31/1852 (2013.01); H01L 31/1856 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01);
Abstract

A semiconductor wafer comprising a substrate layer and a first GaN layer having one or more SiNx interlayers therein, wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10 nm.

Find Patent Forward Citations

Humphreys, Colin. (2015). Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein (U.S. Patent No. 9142723). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9142723

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…