The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 12, 2011
Applicants:
Colin Humphreys, Cambridge, GB;
Clifford Mcaleese, Cambridge, GB;
Menno Kappers, Cambridge, GB;
Zhenyu Liu, Cambridge, GB;
Dandan Zhu, Cambridge, GB;
Inventors:
Colin Humphreys, Cambridge, GB;
Clifford McAleese, Cambridge, GB;
Menno Kappers, Cambridge, GB;
Zhenyu Liu, Cambridge, GB;
Dandan Zhu, Cambridge, GB;
Assignee:
Intellec Limited, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); B82Y 20/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02573 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/075 (2013.01); H01L 31/1852 (2013.01); H01L 31/1856 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01);
Abstract
A semiconductor wafer comprising a substrate layer and a first GaN layer having one or more SiNx interlayers therein, wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10 nm.