The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

May. 02, 2011
Applicants:

Chang Youn Kim, Ansan-si, KR;

Joon Hee Lee, Ansan-si, KR;

Jong Kyun You, Ansan-si, KR;

Hong Chol Lim, Ansan-si, KR;

Hwa Mok Kim, Ansan-si, KR;

Inventors:

Chang Youn Kim, Ansan-si, KR;

Joon Hee Lee, Ansan-si, KR;

Jong Kyun You, Ansan-si, KR;

Hong Chol Lim, Ansan-si, KR;

Hwa Mok Kim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/025 (2013.01); H01L 2933/0091 (2013.01);
Abstract

An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.


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