The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Feb. 23, 2012
Vinod Adivarahan, Columbia, SC (US);
Qhalid Fareed, Columbia, SC (US);
Asif Khan, Irmo, SC (US);
NITEK, INC., Columbia, SC (US);
Abstract
An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises AlInGaN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A first conductive layer with a first type of conductivity is formed on the super-lattice wherein the first conductive layer comprises AlInGaN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A quantum well region is formed on the first conductive layer wherein the quantum well region comprises AlInGaN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A second conductive layer is formed on the quantum well with a second type of conductivity wherein the second conductive layer comprises AlInGaN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A first metal contact is formed in electrical contact with the first conductive layer and a second metal contact is formed in electrical contact with the second conductive layer.