The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jun. 18, 2014
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Seung Joo Baek, Seoul, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 21/76229 (2013.01); H01L 21/76237 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/7854 (2013.01);
Abstract
In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistor from being generated by the wall oxide film.
Baek, Seung. (2015). Semiconductor device having fin structure and method of manufacturing the same (U.S. Patent No. 9142678). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9142678
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile