The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Apr. 30, 2014
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG DISPLAY CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 31/00 (2006.01); H01L 27/14 (2006.01); H01L 29/15 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 51/40 (2006.01); H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01J 1/62 (2006.01); H01J 63/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7831 (2013.01); H01L 27/1214 (2013.01); H01L 27/3244 (2013.01); H01L 29/41733 (2013.01); H01L 29/786 (2013.01); H01L 29/78648 (2013.01);
Abstract
A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode.