The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 30, 2011
Donato Corona, Augusta, IT;
Nicolo′ Frazzetto, S. Giovanni la Punta, IT;
Antonio Giuseppe Grimaldi, S. Giovanni la Punta, IT;
Corrado Iacono, Syracuse, IT;
Monica Micciche′, Enna, IT;
Donato Corona, Augusta, IT;
Nicolo′ Frazzetto, S. Giovanni la Punta, IT;
Antonio Giuseppe Grimaldi, S. Giovanni la Punta, IT;
Corrado Iacono, Syracuse, IT;
Monica Micciche′, Enna, IT;
STMICROELECTRONICS S.R.L., Agrate Brianza (MB), IT;
Abstract
An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.