The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Dec. 19, 2012
Applicant:

Abb Technology Ag, Zurich, CH;

Inventor:

Peter Streit, Widen, CH;

Assignee:

ABB TECHNOLOGY AG, Zurich, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/74 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/74 (2013.01); H01L 29/0839 (2013.01); H01L 29/42308 (2013.01); H01L 29/7428 (2013.01);
Abstract

A phase control thyristor includes a main gate structure and a plurality of local emitter shorts dots arranged in a shorts pattern on a cathode side of the thyristor. The main gate structure includes longitudinal main gate beams extending from a center region of the cathode side towards a circumferential region. Neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line. The shorts pattern is more homogeneous in a region closer to a main gate beam than in a region closer to an associated middle line. Adaptions to match shorts patterns in neighboring segments of the cathode side surface are made in regions away from the main gate beams such that an electron hole plasma spreading from the main gate beam is not interfered by any inhomogeneity of the shorts dots pattern. The design rules enable an improvement of the thyristor operational characteristics.


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