The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Nov. 13, 2013
Applicant:
Hyundai Motor Company, Seoul, KR;
Inventors:
Jong Seok Lee, Suwon-si, KR;
Kyoung-Kook Hong, Hwaseong-si, KR;
Dae Hwan Chun, Gwangmyung-si, KR;
Youngkyun Jung, Seoul, KR;
Assignee:
HYUNDAI MOTOR COMPANY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/0688 (2013.01); H01L 29/4232 (2013.01); H01L 29/4236 (2013.01); H01L 29/42312 (2013.01); H01L 29/42316 (2013.01); H01L 29/66734 (2013.01); H01L 29/66787 (2013.01); H01L 29/66795 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7834 (2013.01);
Abstract
The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate. According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.