The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 29, 2014
Kabushiki Kaisha Toshiba, Tokyo, JP;
Syotaro Ono, Ishikawa, JP;
Masaru Izumisawa, Ishikawa, JP;
Hideyuki Ura, Ishikawa, JP;
Hiroaki Yamashita, Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first layer of a first conductivity type between a first and a second electrode. A second layer of the first conductivity type is between the first layer and the second electrode. A pair of third layers of a second conductivity type has a first portion in the first layer and a second portion contacting the second layer. A fourth layer is between the second layer and the second electrode and between the third layers and the second electrode. A fifth layer is between the fourth layer and the second electrode. A third electrode is adjacent to the second layer via a first insulating film. A fourth electrode is between the second electrode and the third electrode and adjacent to the fourth semiconductor layer via a second insulating film. The second insulating film is thinner than the first insulating film.