The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jul. 03, 2012
Yoshifumi Matsuzaki, Hanno, JP;
Yoshifumi Matsuzaki, Hanno, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor base body having an n-type semiconductor layer and an n-type semiconductor layer p-type diffusion regions selectively formed on a surface of the n-type semiconductor layer, and a barrier metal layer formed on a surface of the n-type semiconductor layer and surfaces of p-type diffusion regions. A Schottky junction is between the barrier metal layer and the n-type semiconductor layer. An ohmic junction is between the barrier metal layer and the p-type diffusion regions. Platinum is diffused into the semiconductor base body such that a concentration of platinum becomes maximum in a surface of the n-type semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile