The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 26, 2013
Applicant:
Formosa Epitaxy Incorporation, Taoyuan County, TW;
Inventors:
Chun-Ju Tun, Taoyuan County, TW;
Yi-Chao Lin, Taoyuan County, TW;
Chen-Fu Chiang, Taoyuan County, TW;
Cheng-Huang Kuo, Tainan, TW;
Assignee:
Formosa Epitaxy Incorporation, Taoyuan County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/20 (2006.01); H01L 21/266 (2006.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/2258 (2013.01); H01L 21/266 (2013.01); H01L 21/26546 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 31/0352 (2013.01); H01L 31/1852 (2013.01); H01L 31/1856 (2013.01); H01L 33/24 (2013.01); Y02E 10/544 (2013.01);
Abstract
A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other.