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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9142618 B1

PDFFull Text
Date of Patent:
Sep. 22, 2015

Filed:

Nov. 26, 2013

Semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Mariko Suzuki, Kanagawa, JP;

Tadashi Sakai, Kanagawa, JP;

Naoshi Sakuma, Kanagawa, JP;

Masayuki Katagiri, Kanagawa, JP;

Yuichi Yamazaki, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Dung Le

Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 21/04 (2006.01); H01L 29/812 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); H01L 21/02376 (2013.01); H01L 21/02433 (2013.01); H01L 21/02444 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02516 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/041 (2013.01); H01L 21/042 (2013.01); H01L 29/045 (2013.01); H01L 29/6603 (2013.01); H01L 29/66045 (2013.01); H01L 29/8128 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01); H01L 29/0657 (2013.01); H01L 29/4236 (2013.01);
Abstract

A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

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