The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Nov. 08, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/10808 (2013.01); H01L 27/10817 (2013.01); H01L 27/10852 (2013.01); H01L 28/82 (2013.01); H01L 28/87 (2013.01); H01L 28/90 (2013.01);
Abstract
A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material.