The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Feb. 27, 2014
Applicant:

Asahi Kasei Microdevices Corporation, Chiyoda-ku, Tokyo, JP;

Inventors:

Tsuyoshi Fujiwara, Tokyo, JP;

Kiyohiko Satoh, Tokyo, JP;

Daichi Matsumoto, Tokyo, JP;

Tsutomu Miyazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01L 21/28 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/28 (2013.01); H01L 23/5223 (2013.01); H01L 23/53223 (2013.01); H01L 28/75 (2013.01);
Abstract

A step of forming a stacked film serving as a lower electrode, a step of forming an insulating film serving as a capacitive film on the stacked film, and a step of patterning the insulating film and the stacked film are performed. In the step of forming the stacked film, a film containing titanium, a film containing titanium and nitrogen, a main conductive film containing aluminum, a film containing titanium, and a film containing titanium and nitrogen are sequentially formed from below. The ratio of the surface roughness of the upper surface of the stacked film to the thickness of the insulating film is 14% or less.


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