The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Sep. 08, 2014
Applicant:
Silicon Optronics, Inc., Hsinchu, TW;
Inventor:
Jun-Bo Chen, Hsinchu, TW;
Assignee:
SILICON OPTRONICS, INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14806 (2013.01); H01L 27/14689 (2013.01);
Abstract
A method for manufacturing a transfer gate transistor of an image sensor device is disclosed. The transistor includes a substrate, a gate oxide layer on the substrate and a gate electrode portion on the gate oxide layer. The gate electrode portion has a trench or an insulating layer used for accurately defining a first region and a second region in the gate electrode portion, wherein the first region has a first conductivity type, and the second region has a second conductivity type or is an undoped region.