The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 02, 2014
Applicants:
Alfred Goerlach, Kusterdingen, DE;
Ning Qu, Reutlingen, DE;
Inventors:
Alfred Goerlach, Kusterdingen, DE;
Ning Qu, Reutlingen, DE;
Assignee:
ROBERT BOSCH GMBH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/73 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 29/0615 (2013.01); H01L 29/16 (2013.01); H01L 29/66143 (2013.01); H01L 29/7302 (2013.01); H01L 29/732 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01);
Abstract
A semiconductor array is described whose breakdown voltage has only a very low temperature coefficient or none at all and therefore there is little or no temperature-dependent voltage rise. The voltage limitation is achieved by a punch-through effect.