The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Mar. 12, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Mahbub Rashed, Santa Clara, CA (US);

Yuansheng Ma, Santa Clara, CA (US);

Irene Lin, Los Altos Hills, CA (US);

Jason Stephens, Beacon, NY (US);

Yunfei Deng, Sunnyvale, CA (US);

Yuan Lei, Sunnyvale, CA (US);

Jongwook K E, Pleasanton, CA (US);

Roderick Augur, Hopewell Junction, NY (US);

Shibly Ahmed, San Jose, CA (US);

Subramani Kengeri, San Jose, CA (US);

Suresh Venkatesan, Los Gatos, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 23/5384 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/7851 (2013.01);
Abstract

An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.


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