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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9142448 B1

PDFFull Text
Date of Patent:
Sep. 22, 2015

Filed:

Nov. 02, 2012

Method of producing a silicon-on-insulator article

Applicant:

The Silanna Group Pty Ltd, Eight Mile Plains, Queensland, AU;

Inventors:

Andrew John Brawley, Cecil Hillls, AU;

Petar Branko Atanackovic, Henley Beach, AU;

Andrew John Black, Melbourne, AU;

Yong Cheow Gary Lim, Melbourne, AU;

Assignee:

THE SILANNA GROUP PTY LTD, Eight Mile Plains, Queensland, AU;

Attorneys:

Nixon Peabody LLP

Joseph Bach, Esq.

Primary Examiner:

Joseph Schoenholtz

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 29/772 (2006.01); H01L 21/20 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/2007 (2013.01); H01L 21/76254 (2013.01); H01L 21/76262 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/78603 (2013.01);
Abstract

A method of producing a silicon-on-insulator article, the method including: forming a first aluminum nitride layer thermally coupled to a first silicon substrate; forming a second aluminum nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminum nitride layers of the first and second substrates together so that the first and second aluminum nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminum nitride layers.

Find Patent Forward Citations

Brawley, Andrew. (2015). Method of producing a silicon-on-insulator article (U.S. Patent No. 9142448). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9142448

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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