The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Dec. 09, 2010
Yong-duck Son, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Min-jae Jeong, Yongin, KR;
Byung-soo SO, Yongin, KR;
Seung-kyu Park, Yongin, KR;
Kil-won Lee, Yongin, KR;
Yun-mo Chung, Yongin, KR;
Byoung-keon Park, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Tak-young Lee, Yongin, KR;
Jae-wan Jung, Yongin, KR;
Yong-Duck Son, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Min-Jae Jeong, Yongin, KR;
Byung-Soo So, Yongin, KR;
Seung-Kyu Park, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Jae-Wan Jung, Yongin, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.