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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9142405 B1

PDFFull Text
Expired
Date of Patent:
Sep. 22, 2015

Filed:

Dec. 09, 2010

Thin film transistor, method of manufacturing active layers of the thin film transistor, and display device

Applicants:

Yong-duck Son, Yongin, KR;

Ki-yong Lee, Yongin, KR;

Jin-wook Seo, Yongin, KR;

Min-jae Jeong, Yongin, KR;

Byung-soo SO, Yongin, KR;

Seung-kyu Park, Yongin, KR;

Kil-won Lee, Yongin, KR;

Yun-mo Chung, Yongin, KR;

Byoung-keon Park, Yongin, KR;

Dong-hyun Lee, Yongin, KR;

Jong-ryuk Park, Yongin, KR;

Tak-young Lee, Yongin, KR;

Jae-wan Jung, Yongin, KR;

Inventors:

Yong-Duck Son, Yongin, KR;

Ki-Yong Lee, Yongin, KR;

Jin-Wook Seo, Yongin, KR;

Min-Jae Jeong, Yongin, KR;

Byung-Soo So, Yongin, KR;

Seung-Kyu Park, Yongin, KR;

Kil-Won Lee, Yongin, KR;

Yun-Mo Chung, Yongin, KR;

Byoung-Keon Park, Yongin, KR;

Dong-Hyun Lee, Yongin, KR;

Jong-Ryuk Park, Yongin, KR;

Tak-Young Lee, Yongin, KR;

Jae-Wan Jung, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/02672 (2013.01); H01L 27/1277 (2013.01); H01L 27/1281 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

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Quick Actions:

Son, Yong-Duck. (2015). Thin film transistor, method of manufacturing active layers of the thin film transistor, and display device (U.S. Patent No. 9142405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9142405

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