The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Feb. 29, 2012
Applicants:
Meng-kun Lee, Cupertino, CA (US);
Kwok W. Yeung, Milpitas, CA (US);
Inventors:
Meng-Kun Lee, Cupertino, CA (US);
Kwok W. Yeung, Milpitas, CA (US);
Assignee:
SK hynix memory solutions inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/42 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 5/147 (2013.01);
Abstract
A method for correcting a cell voltage driftage in a NAND flash device is disclosed. An indicator indicating a cell voltage driftage in a memory unit of a NAND flash device is monitored by a processor. A cell voltage driftage in the NAND flash device is detected based at least in part on the indicator. One or more NAND commands correcting the cell voltage driftage are generated. The one or more NAND commands include a NAND command associated with changing a configuration setting of the NAND flash device.