The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 06, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Masayuki Akou, Kanagawa, JP;
Mitsuhiro Noguchi, Kanagawa, JP;
Akimichi Goyo, Kanagawa, JP;
Yu Suzuki, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A non-volatile semiconductor memory device includes a memory cell configured to allow electrical writing and erasing, a bit line configured to transmit a potential corresponding to data stored in the memory cell in a column direction, a sense amplifier circuit configured to detect a potential of the bit line, and a bit line coupling circuit coupled between the bit line and the sense amplifier circuit. The bit line coupling circuit includes a first bit line coupling transistor in an outer layout area of the bit line coupling circuit and a second bit line coupling transistor in an inner layout area of the bit line coupling circuit. The first bit line coupling transistor has a longer distance in a channel length direction or in a channel width direction between an impurity diffused layer coupled to the bit line and an element isolation area than the second bit line coupling transistor.