The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Jul. 11, 2013
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Nam Kyeong Kim, Icheon, KR;

Byoung Sung Yoo, Seoul, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/06 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/349 (2013.01);
Abstract

A nonvolatile memory includes a memory cell array including a plurality of nonvolatile memory cells connected to bit lines and word lines crossing the bit lines, a voltage driver configured to provide a word line voltage to the word lines and provide a first voltage during a precharging operation and a second voltage during a sensing operation, based on a voltage setting signal, and a page buffer unit configured to adjust a precharging level of a sensing node connected to a bit line of a page included in a selected memory block of the memory cell array using the first voltage and adjust a sensing level of the sensing node using the second voltage.


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