The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 30, 2013
Applicant:
Marvell World Trade Ltd., St. Michael, BB;
Inventors:
Winston Lee, Palo Alto, CA (US);
Peter Lee, Pleasanton, CA (US);
Assignee:
MARVELL WORLD TRADE LTD., St. Michael, BB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/412 (2006.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 11/417 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 11/417 (2013.01); G11C 11/419 (2013.01);
Abstract
A memory system includes first memory cells and second memory cells. Each of the first memory cells includes first and second pass gates including NMOS transistors. Each of the second memory cells include first and second pass gates including PMOS transistors. The first memory cells are pre-charged by one polarity of a voltage supply. The second memory cells are pre-charged by an opposite polarity of the voltage supply.