The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 10, 2011
Applicants:
Christofer Toumazou, London, GB;
Abdulrahman Al-ahdal, London, GB;
Inventors:
Christofer Toumazou, London, GB;
Abdulrahman Al-Ahdal, London, GB;
Assignee:
DNA ELECTRONICS LIMITED, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G11C 16/045 (2013.01); G11C 16/0416 (2013.01); G11C 16/0441 (2013.01); Y10T 436/143333 (2015.01);
Abstract
There is provided a semiconductor device for detecting a change in ion concentration of a sample and method of using same. The device can have a plurality of Field Effect Transistors (FETs) coupled to a common floating gate and an ion sensing layer exposed to the sample and coupled to the floating gate. There may be other input voltages coupled to the floating gate.