The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Feb. 27, 2008
Applicants:
Chang-gong Wang, Chandler, AZ (US);
Eric Shero, Phoenix, AZ (US);
Inventors:
Chang-Gong Wang, Chandler, AZ (US);
Eric Shero, Phoenix, AZ (US);
Assignee:
ASM America, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/314 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45534 (2013.01); H01L 21/28088 (2013.01); H01L 21/28194 (2013.01); H01L 21/3115 (2013.01); H01L 21/3141 (2013.01); H01L 21/31641 (2013.01); H01L 21/31645 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 21/3143 (2013.01); H01L 21/3162 (2013.01);
Abstract
Methods for doping a substrate surface or the interface between two thin films by atomic layer deposition process (ALD) are provided. By blocking some of the available binding sites for a dopant precursor with a blocking reactant, the concentration and uniformity of dopant deposited can be controlled. The blocking reactant may be introduced prior to introduction of the dopant precursor in the ALD process, or the blocking reactant and the dopant precursor can be introduced simultaneously.