The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jul. 07, 2011
Applicants:
Yousuke Endo, Kitaibaraki, JP;
Masaru Sakamoto, Kitaibaraki, JP;
Inventors:
Yousuke Endo, Kitaibaraki, JP;
Masaru Sakamoto, Kitaibaraki, JP;
Assignee:
JX Nippon Mining Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); H01J 37/3414 (2013.01); H01J 37/3426 (2013.01); Y10T 29/49991 (2015.01);
Abstract
The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.