The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Jul. 25, 2013
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Stephane Nicolas, Meylan, FR;

Xavier Baillin, Crolles, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00285 (2013.01); B81C 1/00293 (2013.01); H01L 21/56 (2013.01); H01L 24/96 (2013.01); B81C 2203/0145 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of encapsulating at least one microelectronic device is provided, including encapsulating the device in a cavity hermetically sealed against air, a cap of the cavity including at least one wall permeable to at least one noble gas; injecting the noble gas into the cavity through the wall permeable to the noble gas; hermetically sealing the cavity against air and the injected noble gas; forming the device on at least one first substrate; bonding at least one second substrate to the first substrate, thereby forming the cavity hermetically sealed against air, the wall permeable to the noble gas being formed by part of the second substrate; and forming, between the encapsulating and the injecting, at least one portion of material impermeable to the noble gas such that said portion partially covers the part of the second substrate that forms the wall permeable to the noble gas.


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